Aixtron Application Papers

• The role of AlN and GaN nucleation layers on the performance of doped and undoped nitride HEMT structures grown by MOCVD
• 7x6 inch MOCVD system for the productionof VCSEL, HBT, HEMT
• 7×6 inch multi wafer Planetary Reactor® for the HBT and p-HEMT mass productions
• 7×6 INCH MULTI WAFER PLANETARY REACTOR® AS USED FOR P-HEMT AND HBT APPLICATIONS
• MOCVD technology in research, development and mass production

• Evaluate CMP for Conductive Layer Thickness
• Cost of Ownership
• Copper Film Thickness Comparison
  LEI RS300 vs 4 pt Probe
• Sheet Resistance and Film Thickness Mapping
  for LED Manufacturing
• Sheet Resistance and Film Thickness Mapping
  for MEMS Manufacturing
• Cost of Misclassifcation
• LEI 1500 Series Version 3.0 Software Overview
• Sheet Resistance and Film Thickness Mapping
  of Copper Metallization
• Mobility and Sheet Charge Measurements
  of Gallium Arsenide, Gallium Nitride and Other Semiconducting Materials
• RFMD ICMOVPE Slides
• Using the Lehighton Contactless Probe System for Metallization Applications

LEI References in Technical Papers/Conference Presentations

• Sheet Resistance Mapping for GaN-Based Light-Emitting DiodesUsing
  Lehighton Electronics LEI-1510 Instrument by Thomas Gessmann and E. Fred Schubert
• Applications of Contactless Sheet Resistance Probes to Achieve Cost Savings by Austin Blew, President, Lehighton Electronics, Inc
• MOCVD AlGaN/GaN HFET's Material Optimization and Devices Characterization by Alexander Demchuk, Don Olson, Dan Olson, Minseub Shin, and Gordon Munns of APA Optics, Inc.,
• AlGaN/GaN HFETs fabricated on 100-mm GaN on silicon (1 11) substrates by J.D.Brown * ,Ric Borges,Edwin Piner,Andrei Vescan,Sameer Singhal, Robert Therrien
• Commercial Production of Large Diameter InP-HBT Epiwafers by MBE by D. I. Lubyshev, K. Teker, O. Malis, Y. Wu, J. M. Fastenau, X.-M. Fang, C. Doss, A. B. Cornfeld, and W. K. Liu
• Volume Epitaxial Growth of Enhanced Mode HIGFETs using Minimal Material Characterization and Rapid Inline Processing to Minimize Risk by Michael Pelczynski, Mark Rittgers, Bob Duffin, Celicia Della-Morrow, Mikhail Mikhov
• Application of IVS Overlay Measurement to Wafer Deformation Characterization Study byYing Liu and Ian Black
• Improvement of Substrate Related Uniformity of AlGaN/GaN HEMT Epi Wafers on ¥3" Sapphire and SiC Substrates Grown by Multi-charged Large MOVPE Reactor by Takeshi Tanaka 1) , Yoshiharu Koji 2) , Takeshi Meguro 3) and Yohei Otoki
• Transition of SiC MESFET Technology from Discrete Transistors to High  Performance MMIC Technology by J.W. Milligan, J. Henning, S.T. Allen, A.Ward, P. Parikh, R.P. Smith, A. Saxler, Y. Wu, and J. Palmour
• Migration Enhanced Metalorganic Chemical Vapor Deposition of  AlN/GaN/InN based heterostructures by Qhalid Fareed, Remis Gaska, Juras Mickevicius, Gintautas Tamulaitis, Michael S. Shur, M. Asif Khan
• 0.1 µm InP HEMT MMIC Fabrication on 100 mm Wafers for Low Cost, High Performance Millimeter-Wave Applications by J. Uyeda, R. Grundbacher, R. Lai, D. Umemoto, P.-H. Liu, M. Barsky, A. Cavus, L.J. Lee, J. Chen, J. Gonzalez, S. Chen, R. Elmadjian, T. Block, and A. Oki
• NIT-Epitec GaN FET Project contact Toshimasa Suzuki
• Probes for Monitoring Low Dose Silicon Ion Implants for Process Yield Enhancement by Daniel H. Rosenblatt, Samsung Microwave Semiconductor
• Correlation of Materials Characteristics with Microwave Device by
  R. L. Messham, H. G. Henry, G. Augustine, M. F. MacMillan, I. Ferguson ,
  D. Gotthold, D. Thomson b , R. Davis , G. C. DeSalvo and J. J. Zingaro
• III-Nitride Epitaxial Material on Large Diameter Semi-Insulating SiC Substrates for High-Power RF Transistors by Adam W. Saxler, Edward L. Hutchins, Jason Jenny, and Austin Blew
• Novel III- Nitride HEMTs by Professor Kei May Lau
• In0.75 Ga0.25As channel layers with record mobility exceeding 12,000 cm2/Vs for use in high-j dielectric NMOSFETs by Ravi Droopad, Karthik Rajagopalan, Jonathan Abrokwah, Michael Canonico, Matthias Passlack