Applications:
-Bulk, epitaxial and ion implanted
 wafers
-Epitaxial and implanted GaAs wafers
-Process control wafers
-Special sharp peak structures

Measurement Parameter:
- Carrier density vs depth data

System Features:
-On-screen real time plot (N vs X)
-Graphical and columnar data
 representations
-Keyboard selectable BIAS and
 DEPTH modes
-Menu screen entries for all system
 parameters
-Integrated calibration routine
-Easy-to-use TRAP detection feature