Aixtron Application Papers
		The role of AlN and GaN nucleation layers on the performance of doped and undoped nitride HEMT structures grown by MOCVD by A. Alam, B. Schineller, M. Heuken and H. Juergensen, H. Hardtdegen, M. Marso, N. Nastase, H. Bay, P. Kordos, and H. Lüth 7x6 inch MOCVD system for the productionof VCSEL, HBT, HEMT by J. Hofeldt, B. Schineller, M. Heuken 7×6 inch multi wafer Planetary Reactor® for the HBT and p-HEMT mass productions by Kai Christiansen, Jochen Hofeldt, Martin Dauelsberg, Michael Volk, Michael Heuken, Holger Jüergensen 7×6 INCH Multi Wafer Planetary Reactor® as used for P-HEMT and HBT Applications by Jochen Hofeldt,, Thomas Schmitt, Martin Dauelsberg, Michael Volk, Michael Heuken, Holger Jüergensen MOCVD technology in research, development and mass production by H. Juergensen Other Application Notes Evaluate CMP for Conductive Layer Thickness by Lehighton Electronics, Inc. Cost of Ownership by Lehighton Electronics, Inc. Copper Film Thickness Comparison LEI RS300 vs 4 pt Probe by Lehighton Electronics, Inc. Sheet Resistance and Film Thickness Mapping for LED Manufacturing by Lehighton Electronics, Inc. Sheet Resistance and Film Thickness Mapping for MEMS Manufacturing by Lehighton Electronics, Inc. Cost of Misclassifcation by Lehighton Electronics, Inc. Sheet Resistance and Film Thickness Mapping of Copper Metallization by Lehighton Electronics, Inc. Mobility and Sheet Charge Measurement of Gallium Arsenide, Gallium Nitride and Other Semiconducting Materials by Lehighton Electronics, Inc. RFMD ICMOVPE Slides by Shawn R. Gibb, Daniel S. Green, Brook Hosse, David E. Grider, and Joseph A. Smart Using the Lehighton Contactless Probe System for Metallization Applications by Rob Christ LEI References in Technical Papers/Conference Presentation Sheet Resistance Mapping for GaN-Based Light-Emitting DiodesUsing Lehighton Electronics LEI-1510 Instrument by Thomas Gessmann and E. Fred Schubert Applications of Contactless Sheet Resistance Probes to Achieve Cost Savings by Austin Blew, President, Lehighton Electronics, Inc. MOCVD AlGaN/GaN HFET's Material Optimization and Devices Characterization by Alexander Demchuk, Don Olson, Dan Olson, Minseub Shin, and Gordon Munns of APA Optics, Inc. AlGaN/GaN HFETs fabricated on 100-mm GaN on silicon (1 11) substrates by J.D.Brown , Ric Borges,Edwin Piner,Andrei Vescan,Sameer Singhal, Robert Therrien Commercial Production of Large Diameter InP-HBT Epiwafers by MBE by D. I. Lubyshev, K. Teker, O. Malis, Y. Wu, J. M. Fastenau, X.-M. Fang, C. Doss, A. B. Cornfeld, and W. K. Liu Volume Epitaxial Growth of Enhanced Mode HIGFETs using Minimal Material Characterization and Rapid Inline Processing to Minimize Risk by Michael Pelczynski, Mark Rittgers, Bob Duffin, Celicia Della-Morrow, Mikhail Mikhov Application of IVS Overlay Measurement to Wafer Deformation Characterization Study by Ying Liu and Ian Black Improvement of Substrate Related Uniformity of AlGaN/GaN HEMT Epi Wafers on 3"; Sapphire and SiC Substrates Grown by Multi-charged Large MOVPE Reactor by Takeshi Tanaka, Yoshiharu Koji , Takeshi Meguro, and Yohei Otoki Transition of SiC MESFET Technology from Discrete Transistors to High  Performance MMIC Technology by J.W. Milligan, J. Henning, S.T. Allen, A.Ward, P. Parikh, R.P. Smith, A. Saxler, Y. Wu, and J. Palmour Migration Enhanced Metalorganic Chemical Vapor Deposition of  AlN/GaN/InN based heterostructures by Qhalid Fareed, Remis Gaska, Juras Mickevicius, Gintautas Tamulaitis, Michael S. Shur, M. Asif Khan 0.1 µm InP HEMT MMIC Fabrication on 100 mm Wafers for Low Cost, High Performance Millimeter-Wave Applications by J. Uyeda, R. Grundbacher, R. Lai, D. Umemoto, P.-H. Liu, M. Barsky, A. Cavus, L.J. Lee, J. Chen, J. Gonzalez, S. Chen, R. Elmadjian, T. Block, and A. Oki NIT-Epitec GaN FET Project contact Toshimasa Suzuki Probes for Monitoring Low Dose Silicon Ion Implants for Process Yield Enhancement by Daniel H. Rosenblatt, Samsung Microwave Semiconductor Correlation of Materials Characteristics with Microwave Deviceby R. L. Messham, H. G. Henry, G. Augustine, M. F. MacMillan, I. Ferguson, D. Gotthold, D. Thomson , R. Davis , G. C. DeSalvo and J. J. Zingaro III-Nitride Epitaxial Material on Large Diameter Semi-Insulating SiC Substrates for High-Power RF Transistors by Adam W. Saxler, Edward L. Hutchins, Jason Jenny, and Austin Blew Novel III- Nitride HEMTsby Professor Kei May Lau In0.75 Ga0.25As channel layers with record mobility exceeding 12,000 cm2/Vs for use in high-j dielectric NMOSFETs by Ravi Droopad, Karthik Rajagopalan, Jonathan Abrokwah, Michael Canonico, Matthias Passlack