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References [1] G.L. Miller, D.A.H. Robinson, and J.D.
Wiley, "Contactless measurement of semiconductor conductivity by radio
frequency-free-carrier power absorption", Rev. Sci. Instrum., Vol. 47
(1976). [2] R.H. Wallis, private communication. [3] D.H. Rosenblatt, "Probes for
monitoring low dose silicon ion implants for process yield enhancement",
presented at 1995 Conference on GaAs Manufacturing Technology. [4] M.J. Brophy, private communication. [5] M.R. Wilson, R. Balda, C. Della, J.
Gilbert, E. Huang, and L.S. Klingbeil, "Enhanced manufacturability of
GaAs ion implanted MESFET technology for monolithic microwave integrated
circuits", presented at 1995 Conference on GaAs Manufacturing
Technology. [6] M.J. Brophy, X. Liu, T. Young, H.I.
Helava, M. Young, B. Lauterwaser, and C. Jacobs, "Vertical gradient
freeze GaAs for ion-implantation applications" [7] B.J.F. Lin, H. Luechinger, C.P. Kocot,
E. Littau, C. Stout, B. McFarland, H. Rohdin, J.S. Kofol, R.P. Jaeger, and D.E.
Mars, "A 1-µm MODFET process yielding MUX and DMUX circuits operating at
4.5 Gb/s", IEEE, 1988. [8] C. Beckham, R.A. Stall, A.G. Thompson,
L. Aina, and K. Seipel, "Fabrication of double planar doped
pseudomorphic HEMT devices from MOCVD-grown material", presented at 1995
Conference on GaAs Manufacturing Technology. |
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[9] D.L. Barrett, G.W. Eldridge, R.C.
Clarke, and R.N. Thomas, "Effects of surface stoichiometry and
subsurface damage in silicon implanted GaAs wafers", 1988. [10] G.S. Tompa, M.A. McKee, C. Beckham,
P.A. Zawadzki, J.M. Colabella, P.D. Reinert, K. Capuder, R.A. Stall, and P.E.
Norris, "A parametric investigation of GaAs epitaxial growth uniformity
in a high speed, rotating-disk MOCVD reactor", presented at the 4th
International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE 1988).
Austin Blew is President of Lehighton
Electronics. He is a graduate of Penn State University, the RCA Institutes,
and Philco Technology Center, and is a senior member and Lehigh Valley
Section Vice Chairman of the IEEE. He is Electrical Properties Task Force
Leader of the SEMI Compound Semiconductor Committee, and Mercury Probe
Carrier Concentration vs. Depth Task Force Leader of the SEMI Silicon
Epitaxial Committee. He has been Arrangements Chairman of the IEEE-Lehigh
University AMLCD International Workshop, and ASTM Pilot Study Co-ordinator
and Test Method co-author.
Matt Cordes |
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