- Commercialization of GaN Based Field Effect Transistors by Shawn R. Gibb, Daniel S. Green, Brook Hosse, David E. Grider, and Joseph A. Smart
- Compound Semiconductor MOSFET Structure With High-κ Dielectric by Karthik Rajagopalan, Ravi Droopad, Jon Abrokwah, Matthias Passlack
- Epitaxial Graphene Growth on SiC Wafers by D.K. Gaskill, G.G. Jernigan, P.M. Campbell, J.L. Tedesco, J.C. Culbertson, B.L. VanMil, R.L.Myers Ward, C.R. Eddy, Jr. J. Moon, D. Curtis, M. Hu, D. Wong, C. McGuire, J.A. Robinson, M.A. Fanton, J.P. Stitt, T. Stitt, D. Snyder, X. Wang and E. Frantz
- Epitaxial growth and device fabrication of GaN based electronic and optoelectronic
structures by S. Müller, R. Quay, F. Sommer, F. Vollrath, R. Kiefer, K. Köhler, J. Wagner
- Growth and characterization of 0.8-μm gate length AlGaN/GaN HEMTs on sapphire substrates by Wang Xiaoliang, Wang Cuimei, Hu Guoxin, Wang Junxi, Ran Junxue, Fang Cebao, Li Jianping, Zeng Yiping, Li Jinmin, Liu Xinyu, Liu Jian & Qian He
- High Mobility NMOSFET Structure With High-k Dielectric by Matthias Passlack, Ravi Droopad, Karthik Rajagopalan, Jonathan Abrokwah, Rich Gregory, and Danh Nguyen
- III-Nitride Epitaxial Material on Large Diameter Semi-Insulating SiC Substrates
for High-Power RF Transistors by Adam W. Saxler, Edward L. Hutchins, Jason Jenny, and Austin Blew
- Improved Contactless Micro-Wave Alternative for Hall Measurement for
Compound Semiconductors by Danh T. Nguyen
- Improved process control, lowered costs and reduced risks through the
use of non-destructive mobility and sheet carrier density measurements on
GaAs and GaN wafers by D. Nguyen A, K. Hogan, A. Blew, M. Cordes
- Microwave and RF methods of contactless mapping of the sheet resistance and the complex permittivity of conductive materials and semiconductors by Jerzy Krupka, Danh Nguyen and Janina Mazierska
- Superlattices and Microstructures by Engin Arslan, Özgür Duygulu, Ali Arslan Kaya, Ali Teke, Süleyman Özçelike, Ekmel Ozbay
- Top-Gated Epitaxial Graphene FETs on Si-Face SiC WafersWith a Peak Transconductance of 600 mS/mm by J. S. Moon, D. Curtis, S. Bui, M. Hu, D. K. Gaskill, J. L. Tedesco, P. Asbeck, G. G. Jernigan, B. L. VanMil, R. L. Myers-Ward, C. R. Eddy, Jr., P. M. Campbell, and X. Weng
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